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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large-signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. * Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 9 dB Efficiency -- 33% Intermodulation Distortion -- -30 dBc * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power * Designed for FM, TDMA, CDMA and Multi-Carrier Applications MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR CASE 451-04, STYLE 1 (MRF20060) CASE 451A-01, STYLE 1 (MRF20060S) MAXIMUM RATINGS Rating Collector-Emitter Voltage (IB = 0 mA) Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage (RBE = 100 Ohm) Base-Emitter Voltage Collector Current - Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VCBO VCER VEB IC PD Tstg TJ Rating Thermal Resistance, Junction to Case Symbol RJC Value 25 60 60 30 -3 8 250 1.43 - 65 to +150 200 Unit Vdc Vdc Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Max 0.7 Unit C/W (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF20060 MRF20060S 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Reverse Base-Emitter Breakdown Voltage (IB = 10 mAdc, IC = 0) Zero Base Voltage Collector Leakage Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 25 60 60 3 -- 26 69 69 3.5 -- -- -- -- -- 10 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) hFE 20 40 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob -- 55 -- pF FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) (1) For Information Only. This Part Is Collector Matched. Gpe 9 9.4 -- dB 33 35 -- % IMD -- - 33 - 30 dB IRL 12 19 -- dB No Degradation in Output Power MRF20060 MRF20060S 2 MOTOROLA RF DEVICE DATA VBB R1 Q2 D1 Q1 C1 + C3 R2 R3 C6 C8 C10 L1 L3 C7 C9 + C12 R4 C14 C15 B1 VCC L5 L4 L2 Z6 RF INPUT Z1 C2 Z2 C4 Z3 C5 Z4 Z5 C11 DUT C13 Z7 Z9 Z10 RF OUTPUT B1 C1 C2, C4, C13 C3, C14 C5 C6, C12 C7, C9 C8, C10 C11 C15 Ferrite Bead, P/N 5659065/3B, Ferroxcube 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4.0 pF, Variable Capacitor, Gigatrim, Johanson 0.1 F, Chip Capacitor, Kemit 15 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 13 pF, B Case Chip Capacitor, ATC 470 F, 50 V, Electrolytic Capacitor, Mallory D1 L1, L5 L2, L4 L3 R1 R2 R3, R4 Q1 Q2 Board Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, 0.140 Choke .5 inch of 20 AWG, ID Choke 12.5 nH Inductor 2 x 130 , 1/8 W Chip Resistor, Rohm 2 x 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 1. Class AB, 1.93 - 2 GHz Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 3 Vsupply + R1 R5 R2 Q1 R3 Q2 VCC VCC C3 R4 R6 R9 + C6 B1 R8 C10 C11 R10 C13 C14 C8 L3 R7 + L1 N1 RF INPUT Z1 C5 C1 Z2 C2 Z3 C4 Z5 Z4 DUT C7 L2 C12 Z6 Z7 N2 RF OUTPUT C9 B1 C1, C2 C3, C8 C4, C12 C5, C11 C6 C7, C10 C9 C13 C14 L1 L2 L3 Short Bead, Fair Rite 0.6-4.5 pF, Trimmer, Gigatrim, Johanson 100 F, 50 V Electrolytic, Mallory 12 pF, Chip Capacitor, ATC 91 pF, Chip Capacitor, ATC 0.01 mF, Chip Capacitor, ATC 24 pF, Chip Capacitor, ATC 0.4-2.5 pF, Trimmer, Gigatrim, Johanson 0.1 mF, Chip Capacitor, ATC 470 mF, 63 V Electrolytic, Mallory 2 Turn, 27 AWG, 0.049 ID Coil 0.041 dia., 0.7 Length Wire 11 Turn, 20 AWG, 0.19 ID Coil N1, N2 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 Board Type N Flange Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 W, Chip Resistor, 1/8 Watt, Rohm 10 KW, 1/4 Watt, Potentiometer 4.7 KW, Chip Resistor, 1/8 Watt, Rohm 2 x 4.7 KW, Chip Resistor, 1/8 Watt, Rohm 1.0 W, 25 Watt, 1% Resistor, DALE 38 W, Axial Lead, 1 Watt Resistor 4.2 KW, Chip Resistor, 1/8 Watt, Rohm 3 x 39 W, Chip Resistors, 1/8 Watt, Rohm 2 x 10 W, Chip Resistor, 1/8 Watt, Rohm 10 W, Axial Lead, 1 Watt Resistor Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 2. Class A, 1.93 - 2 GHz Test Fixture Electrical Schematic MRF20060 MRF20060S 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 70 Pout , OUTPUT POWER (WATTS) 60 Pout 50 40 Gpe 30 20 10 0 0 2 6 4 Pin, INPUT POWER (WATTS) 8 VCC = 26 Vdc ICQ = 200 mA f = 2000 MHz Single Tone 10.5 10 9.5 9 8.5 8 10 G pe , GAIN (dB) 11.5 Pout , OUTPUT POWER (WATTS) 11 70 60 50 40 3W 30 20 10 0 1800 1850 1900 f, FREQUENCY (MHz) VCC = 26 Vdc ICQ = 200 mA 1950 2000 5W Pin = 7 W Figure 3. Output Power & Power Gain versus Input Power Figure 4. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dBc) 3rd Order - 30 5th Order - 40 7th Order - 50 VCC = 26 Vdc ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 10 30 50 40 60 Pout, OUTPUT POWER (WATTS) PEP 20 70 80 10 Gpe G pe , GAIN (dB) 9.5 9 -15 -20 -25 -30 Pout = 60 W (PEP) ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 IMD -35 -40 28 8.5 8 7.5 - 60 - 70 0 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) Figure 5. Intermodulation Distortion versus Output Power Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage IMD, INTERMODULATION DISTORTION (dBc) - 20 - 25 - 30 200 mA - 35 - 40 400 mA - 45 600 mA - 50 0.1 1.0 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 10 100 ICQ = 100 mA G pe , POWER GAIN (dB) 11 ICQ = 600 mA 10 400 mA 9 200 mA 8 7 6 0.1 100 mA VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 5 IMD, INTERMODULATION DISTORTION (dBc) - 20 10.5 -10 8 IC, COLLECTOR CURRENT (Adc) 7 MTBF LIMITED 6 5 4 3 2 1 0 0 4 8 12 16 20 24 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) TJ = 175C Tflange = 100C BREAKDOWN LIMITED Tflange = 75C G pe , GAIN (dB) 10 Pout = 60 W (PEP) VCC = 26 Vdc ICQ = 200 mA 38 Gpe 36 9.5 COLLECTOR EFFICIENCY (%) INPUT VSWR 9 8.5 34 1.3:1 VSWR 32 1.2:1 28 8 1900 1920 1940 1960 f, FREQUENCY MHz) 1980 28 2000 1.1:1 Figure 9. Class A DC Safe Operating Area Figure 10. Performance in Broadband Circuit 60 MTBF FACTOR (HOURS x AMPS 2 ) 50 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 Pout , OUTPUT POWER (dBm) 40 FUNDAMENTAL 20 0 3rd Order - 20 - 40 0 10 20 30 Pin, INPUT POWER (dBm) 40 VCC = 24 Vdc ICQ = 3.5 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 Figure 11. Class A Third Order Intercept Point This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 12. MTBF Factor versus Junction Temperature MRF20060 MRF20060S 6 MOTOROLA RF DEVICE DATA + j1 + j0.5 + j2 f = 1.8 GHz Zin f = 1.8 GHz + j0.2 1.85 GHz 1.9 GHz 1.95 GHz 2 GHz 2 GHz 1.95 GHz 1.9 GHz Zo = 10 + j3 ZOL* 1.85 GHz + j5 + j10 0.0 0.2 0.5 1 2 3 5 - j10 - j0.2 - j5 - j3 - j0.5 - j2 - j1 VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL* 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equivalent Input and Output Impedence MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 7 Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 3.5 Adc f GHz GH 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 S11 |S11| 0.986 0.985 0.981 0.973 0.968 0.951 0.914 0.851 0.789 0.810 0.880 0.934 0.964 0.977 0.975 0.961 0.942 0.919 0.860 0.821 0.781 f 168 167 167 166 165 163 161 161 164 170 172 170 168 165 163 161 160 157 156 159 161 S21 |S21| 0.32 0.35 0.40 0.45 0.52 0.62 0.76 0.91 1.02 0.94 0.75 0.57 0.45 0.36 0.30 0.25 0.22 0.19 0.17 0.15 0.14 f 81 76 70 63 56 46 32 12 -15 -44 -68 -85 -98 -109 -118 -128 -139 -149 -163 177 157.0 S12 |S12| 0.031 0.031 0.032 0.030 0.033 0.028 0.027 0.024 0.015 0.005 0.006 0.010 0.015 0.022 0.033 0.049 0.066 0.077 0.100 0.128 0.156 f 60 63 61 53 50 47 39 26 5 -7 -151 152 158 164 165 160 149 142 137 122 108 S22 |S22| 0.923 0.918 0.908 0.897 0.889 0.880 0.871 0.863 0.888 0.931 0.953 0.967 0.965 0.955 0.950 0.947 0.938 0.931 0.922 0.914 0.907 f 169 169 169 169 168 169 170 171 174 174 172 170 169 168 167 167 166 165 165 165 165 MRF20060 MRF20060S 8 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS G 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3 2 -B- Q K D 2 PL 0.25 (0.010) M TA M B M N H E F C -T- SEATING PLANE DIM A B C D E F G H K N Q R INCHES MIN MAX 0.995 1.005 0.380 0.390 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130 0.395 0.410 MILLIMETERS MIN MAX 25.27 25.53 9.65 9.91 4.32 5.21 11.56 11.81 1.52 1.91 0.10 0.15 20.32 BSC 1.98 2.29 2.97 3.48 15.11 15.37 3.05 3.30 10.03 10.41 -A- STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451-04 ISSUE D 1 -B- K D N H E F C -A- 3 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.615 0.625 0.395 0.410 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.078 0.090 0.117 0.137 0.595 0.605 MILLIMETERS MIN MAX 15.62 15.88 10.03 10.41 4.32 5.21 11.56 11.81 1.52 1.91 0.10 0.15 1.98 2.29 2.97 3.48 15.11 15.37 -T- SEATING PLANE DIM A B C D E F H K N STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451A-01 ISSUE O MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF20060 MRF20060S 10 MRF20060/D MOTOROLA RF DEVICE DATA |
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